Fig. 3
From: Single-color peripheral photoinhibition lithography of nanophotonic structures
Resolution enhancement and feature size reduction by SC-PPI. a Grating structures with a pitch of P = 140 nm are fabricated to demonstrate the lateral resolution enhancement by SC-PPI. Scale bar: 500 nm. b Polymer linewidth versus the power of the CW inhibition laser beam with a fixed scanning velocity of 1 mm s− 1. The reduction ratio is defined as (LTPL − LPPI)/LTPL, where LTPL and LPPI were the linewidths of TPL and SC-PPI. The insets illustrate the top-view SEM image of the data points A–E. Scale bar: 100 nm