Fig. 2From: All-silicon photovoltaic detectors with deep ultraviolet selectivityDark current and photocurrent of the detector. I-V characteristics of the fabricated Si3N4/n-Si photodetector under the dark and 185 nm illumination of 295.4 μW/cm2. The testing step of voltage is 0.01 V. Inset is the schematic of the detectorBack to article page