From: CsPbBr3/graphene nanowall artificial optoelectronic synapses for controllable perceptual learning
Synapse material | Half-life period | Photocurrent | Laser pulse stimulation time | Ref. |
---|---|---|---|---|
IGZO | 2.7 s | 0.71 nA | 300 ms | [14] |
PDVT-10/N2200 | 0.4 s | 3 nA | 50 ms | [20] |
PbS QDs/Graphene | 1 s | 9 μA | 1.25 s | [21] |
C8-BTBT/ITO | 8 s | 3.25 μA | 1 s | [22] |
CsPbBr3QDs/ PEDOT | 25 s | 30 nA | 1 s | [23] |
SnO2 | 0.1 s | 482 nA | 100 ms | [24] |
Alkylated GO/IGZO | 15.29 s | 2.1 nA | 50 ms | [25] |
CsPbBr3 QDs/PMMA | 41.237 s | 11.3 nA | 1 s | [26] |
Artificial visual perception circuit | 0.937 s | 785.7 nA | 500 ms | [27] |
LOND | 0.1 s | 1.16 nA | 120 ms | [28] |
CsBi3I10/PDPP4T | 2 s | 1.25 nA | 1 s | [29] |
MAPbI3/Si nanomembrane | 5 s | 2 nA | 200 ms | [30] |
CsPbBr3 /PEDOT | 40 s | 6.9 μA | 15 s | [31] |
WS2 | 1.11 s | 0.16 nA | 100 ms | [32] |
Pbs | 23 s | 23.8 nA | 2s | [33] |
MoS2 | 11.81 s | 34.48 nA | 10 ms | [34] |
CsPbBr3/GNWs | 35.59 s | 2.24 μA | 1 s | This work |