Skip to main content

Table 1 Comparison between previous HC type optoelectronic synapses and this work

From: CsPbBr3/graphene nanowall artificial optoelectronic synapses for controllable perceptual learning

Synapse material

Half-life period

Photocurrent

Laser pulse stimulation time

Ref.

IGZO

2.7 s

0.71 nA

300 ms

[14]

PDVT-10/N2200

0.4 s

3 nA

50 ms

[20]

PbS QDs/Graphene

1 s

9 μA

1.25 s

[21]

C8-BTBT/ITO

8 s

3.25 μA

1 s

[22]

CsPbBr3QDs/ PEDOT

25 s

30 nA

1 s

[23]

SnO2

0.1 s

482 nA

100 ms

[24]

Alkylated GO/IGZO

15.29 s

2.1 nA

50 ms

[25]

CsPbBr3 QDs/PMMA

41.237 s

11.3 nA

1 s

[26]

Artificial visual perception circuit

0.937 s

785.7 nA

500 ms

[27]

LOND

0.1 s

1.16 nA

120 ms

[28]

CsBi3I10/PDPP4T

2 s

1.25 nA

1 s

[29]

MAPbI3/Si nanomembrane

5 s

2 nA

200 ms

[30]

CsPbBr3 /PEDOT

40 s

6.9 μA

15 s

[31]

WS2

1.11 s

0.16 nA

100 ms

[32]

Pbs

23 s

23.8 nA

2s

[33]

MoS2

11.81 s

34.48 nA

10 ms

[34]

CsPbBr3/GNWs

35.59 s

2.24 μA

1 s

This work