Fig. 3
From: CsPbBr3/graphene nanowall artificial optoelectronic synapses for controllable perceptual learning
Photoresponsive characteristics of GNWs/CsPbBr3 QDs artificial optoelectronic synapses. a Schematic of middle energy bands of GNW. b Schematic of the energy bands of GNWs/CsPbBr3 QDs heterostructure. c The photocurrent values of the synapses stimulated by a 530 nm laser pulse at different power and exposure durations. d The photocurrent values of the synapses stimulated by a power density 0.35 W/cm2 laser pulse at different wavelengths and exposure times. e Time-dependent photocurrent changes under power density 1.90 W/cm2 360 nm laser pulses. f The photocurrent changes of the synapses stimulated by a power density 1.90 W/cm2 530 nm laser pulse train at different gate voltages (Pulse width: 1 s, pulse interval: 1 s). g Photocurrent decay curve stimulated by a 530 nm laser pulse with the laser power of 1.90 W/cm2 and the pulse width of 1 s