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Fig. 1 | PhotoniX

Fig. 1

From: Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials

Fig. 1

Sb2Se3-based phase shifter using a doped-silicon microheater. a Microheater design with doped-silicon profiles to create an electrical resistor in a half-etched 220 nm SOI waveguide. b FEM simulated propagation loss and sheet resistivity as a function of phosphorous doping concentration. The highlighted region corresponds to the range where our proposed optimum doping concentration lies. c SEM image of a fabricated 6 μm-long bowtie microheater with a 6 μm-long Sb2Se3. d Sb2Se3 refractive index in both amorphous and crystalline states with simulated optical modes for each state at 1565 nm wavelength. e FEM simulated transient temperature during and after the pulse excitation for both amorphization and crystallization. The three-dimensional (3D) plot shows the temperature profile at the end of the amorphization pulse, reaching the melting temperature of Sb2Se3.

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