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Fig. 5 | PhotoniX

Fig. 5

From: High-speed Si-Ge avalanche photodiodes

Fig. 5

a Schematic cross-section of the resonant normal incident Si-Ge SACM APD [90]; b Measured APD RF impedance. The top is the real part and the bottom is the imaginary part. Inset is the equivalent circuit of the device avalanche region [91]; c Measured frequency response at different bias voltages under -20 dBm input optical power [73]; d Measured GBP versus gain under -20 dBm, -26 dBm and -30 dBm input optical powers [73]

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