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PhotoniX

Table 2 Typical value of energy consumption per symbol operating in each device of OPU a

From: The challenges of modern computing and new opportunities for optics

Emission domain

Processing domain

Detecting domain

\( \raisebox{1ex}{${p}_{static}^{Tx}$}\!\left/ \!\raisebox{-1ex}{${F}_{clc}$}\right. \)

\( {E}_{symb}^{Tx}\sim {E}_{symb}^{MD} \)

\( {E}_{symb}^{TIA} \)

100 b

10−4~100 c

10−3~10−2 d

100~101 e

/

\( {E}_{symb}^{DA} \)

\( {E}_{symb}^{AD} \)

/

100~103 f

100~103 f

  1. a The unit of variables in this table is pJ/symb or mW/GHz
  2. b It’s an estimated value assuming that a 100 mW semiconductor light emitter is employed in each lane and Fclc = 1 GHz
  3. c Using the silicon modulators based on carrier effect as reference [160,161,162,163,164,165,166]
  4. d Using novel modulators based on surface plasmon polariton or hybrid plasmonic mechanism [160]
  5. e The voltage feedback TIA’s power is usually restricted by the gain-bandwidth product. \( {\mathrm{E}}_{\mathrm{symb}}^{\mathrm{TIA}} \) is the estimated value based on the data from ref. [167, 168], assuming the gain~104 and the bandwidth~100 GHz
  6. f \( {\mathrm{E}}_{\mathrm{symb}}^{\mathrm{C}} \) (C indicates AD or DA) is usually proportional to 2n (n means n-bit conversion resolution). The value here is estimated both from the datasheet of commercial products [42, 169, 170] and academic works [171] at the condition of 8-bit conversion resolution
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