Fig. 5From: Vacuum-ultraviolet photodetectorsStructure and performance of Schottky VUV photodiodes. a Schematic drawing of the interdigitated-finger Schottky photodiode based on p-diamond epilayer [81]. b Structure of the p-type/intrinsic/metal (PIM) device [82]. c The responsivity and the EQE of the PIM device measured at two different values of the applied bias from 20 nm to 80 nm [82]. d Responsivity of the PIM and IDT-PIM (with interdigitated finger electrodes) diamond detectors [83]Back to article page