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Fig. 4 | PhotoniX

Fig. 4

From: Vacuum-ultraviolet photodetectors

Fig. 4

Performance of photoconductive detectors based on nanostructures. a Spectral photoresponse of the AlN micro/nanowire photodetector measured at diffraction wavelengths ranging from 190 to 280 nm with a bias of 50 V. The inset shows device structure [25]. b Photoresponsivity variation of the h-BN detector under 160 nm light illumination with increasing bias. For comparison, the responsivities of typical AlN and commercial Si VUV detectors to 160 nm light illumination are respectively marked in red and blue dots, and the inset is an image of the few-layered h-BN prototype device [80]. c Relationship between photoresponsivity and voltage under an illumination of 150 nm light, and the inset shows the top view of the 2D MgO prototype device [27]. d Height fluctuation of the h-BN device, which displays a gradually changing thickness from 15 to 20 nm (each layer has a smooth surface at atomic scale). The height step (marked in red dotted lines) has confirmed the existence of the edges. The inset illustrates the role of the trap center: when the h-BN device is under illumination, large amounts of trap states (mainly of them are holes) are formed on the surface especially on the steps [80]

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