Fig. 4
From: All-silicon photovoltaic detectors with deep ultraviolet selectivity
Dependence of the Si3N4/n-Si detector on light intensity and temperature. a I-V characteristics of the Si3N4/n-Si photodetector with light power density from 3.2 to 295.4 μw/cm2. b I-V characteristics from Fig. 5a with extended axis (0 to 0.8 V) to clearly show the open-circuit voltage. c Dependence of the open-circuit voltage and responsivity versus light intensity. Open-circuit voltage is extracted at 0 V bias, and responsivity is extracted at − 5 V bias. d Dependence of photocurrent and external quantum efficiency versus light intensity. e I-V characteristics of the Si3N4/n-Si photodetector with varying temperature from 78 K to 350 K. f Linear dependence of the open-circuit voltage on temperature