From: Perspective on photonic memristive neuromorphic computing
Material | n λ = 600 nm | n λ = 1500 nm | n2 (m2/W) | k λ = 600 nm | k λ = 1550 nm |
---|---|---|---|---|---|
a Nonlinear optical materials | |||||
 graphene | 2.7 [115] | 3.1 [115] | −1∙10− 13 at λ = 1600 nm [84] | 1.3 [115] | 2.2 [115] |
 GO | 1.9 [116] | 2.1 [117] | 8∙10−13 at λ = 800 nm [118] | 0.1 [116] | 0.3 [117] |
 reduced GO | 1.8 [116] | – | −4.9∙10−13 at λ = 800 nm [119] | 0.2 [116] | – |
 Silicon | 4 [115] | 3.5 [120] | 4.3∙10−18 at λ = 1600 nm [121] | 0.03 [115] | 0.01 [120] |
b Phase change materials | |||||
 GST (amorphous) | 3.2 [122] | 3.1 [122] | – | 1 [122] | 0.1 [122] |
 GST (crystalline) | 3.3 [122] | 4.2 [122] | – | 1.8 [122] | 0.8 [122] |
 VO2 (amorphous) | 3.0 [123] | 3.3 [123] | – | 0.5 [123] | 0.4 [123] |
 VO2 (crystalline) | 2.2 [123] | 2.8 [123] | 7.5∙10−8 at λ = 800 nm [101] | 03.9 [123] | 0.6 [123] |
 As2S3 | 2.7 [124] | 2.4 [124] | 3.8∙10−10 at λ = 1550 nm [124] | – | – |
 Sb2Te3 | 1.8 [110] | 6.0 [110] | 2.6∙10−9 at λ = 632.8 nm [125] | 2.9 [110] | 0.8 [110] |