Fig. 6

The dynamic tailoring, reconstruction and slow light modulation of EIT resonance under the asynchronous voltage tuning scheme. a Applied asynchronous bias voltages (V₁ \(\ne\) V₂) to the U-RCR and D-RCR for manipulating the Fermi level. b The evolution process of EIT resonance lineshape excited by graphene metasurface. The Fermi level \({E}_{F1}\) of U-RCR is fixed at 2 eV, and the Fermi level \({E}_{F2}\) of D-RCR is manipulated to change from 2 eV to 1.1 eV. c, d The evolution process of group delay corresponding to EIT resonance, and the peak group delay attenuation curve. e The dependence of \({\gamma }_{1}\), \({\gamma }_{2}\), and \(\kappa\) extracted by fitting the EIT resonance lineshape according to the coupled harmonic oscillators model. The inset gives the simplified schematic diagram of this model. f The tunable slow light performance achieved by manipulating \({E}_{F2}\) in the broadband range under the freely configured asynchronous voltage tuning scheme. Here \({E}_{F1}\) and \({E}_{F2}\) all correspond to the same initial tuning conditions