Fig. 5

Photoelectric performance of one single pixel device of the AlN-based VUV PD array and the performance comparison. a Responsivity and EQE curves at 0 V bias in the range of 120 ~ 300 nm. The insert shows the vertical coordinates of responsivity as logarithms. b Spectral responsivity curves at different bias voltages. c Low-frequency noise power spectral density at open circuit and connected state with 0 V and reverse bias. d Comparison of cutoff wavelength, dark current density and rise time of the reported UV PD arrays. Ref [38]: SiC PIN; Ref [39]: PET/ITO/PEIE/SMA + P3HT/PH1000; Ref [30]: Au/Ti/β-Ga₂O₃/Ti/Au; Ref [40]: Au/GaN/Au; Ref [41]: Au/Ti/\(\upvarepsilon\)-Ga₂O₃/Ti/Au; Ref [32]: ITO/\(\upvarepsilon\)-Ga₂O₃/ITO; Ref [42]: Au/CsPbBr₃/Au; Ref [43]: Au/Cu₂O/Si/Al; Ref [31]: Au/Diamond/Au; Ref [44]: Au/Ni/CH₃NH₃PbI_3-xCl_x/Ni/Au; Ref [45]: AlGaN PIN